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Pioneering Phase-Change Memory (PCM) materials for next-generation memory and storage solutions.

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Element

Structure

Product

TEOAs

Arsenic(III) ethoxide

CAS Number: 3141-12-06

Chemical formula: C₆H₁₅O₃As

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BTESSe

Bis(triethylsilyl) selenide

CAS Number: 14846-53-8

Chemical formula: C₁₂H₃₀SeSi₂

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BTMSSe

Bis(trimethylsilyl) selenide

CAS Number: 4099-46-1

Chemical formula: C₆H₁₈SeSi₂

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DMSe

Dimethyl selenide

CAS Number: 593-79-3

Chemical formula: C₂H₆Se

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BTESTe

Bis(triethylsilyl) telluride

CAS Number: 14846-56-1

Chemical formula: C₆H₁₈TeSi₂

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BTMSTe

Bis(trimethylsilyl) telluride

CAS Number: 4551-16-0

Chemical formula: C₆H₁₈TeSi₂

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